Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed

Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells

Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phasePeer Reviewe

Pipe cutter for cutting to length and simultaneous chamfering of pipes, particularly plastic pipes

Translated from German (German Patent OS 26 22 566)Available from British Library Document Supply Centre- DSC:9022.04812(BG-ERS-Trans--744A)T / BLDSC - British Library Document Supply CentreSIGLEGBUnited Kingdo

Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells

Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phasePeer Reviewe

Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate the RTN-related variation of the device drain current. The RTN parameters obtained from experimental traces are used to simulate the impact of RTN in the drain current of pMOS transistors in SRAM voltage sense amplifiers. The results show that RTN can lead to read errors of the stored data